A high performance doping-less tunneling field effect transistor with Ge/Si0.6Ge0.4/Si\nheterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping-less\ntunneling field effect transistor (DLTFET), the source and channel regions of H-DLTFET respectively\nuse the germanium and Si0.6Ge0.4 materials to get the steeper energy band, which can also increase\nthe electric field of source/channel tunneling junction. Meanwhile, the double-gate process is used to\nimprove the gate-to-channel control. In addition, the effects of Ge content, electrode work functions,\nand device structure parameters on the performance of H-DLTFET are researched in detail, and\nthen the above optimal device structure parameters can be obtained. Compared to the DLTFET, the\nsimulation results show that the maximum on-state current, trans-conductance, and output current of\nH-DLTFET are all increased by one order of magnitude, whereas the off-state current is reduced by\ntwo orders of magnitude, so the switching ratio increase by three orders of magnitude. At the same\ntime, the cut-off frequency and gain bandwidth product of H-DLTFET increase from 1.75 GHz and\n0.23 GHz to 23.6 GHz and 4.69 GHz, respectively. Therefore, the H-DLTFET is more suitable for the\nultra-low power integrated circuits.
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